Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Improved performance of Si-NC memory using a novel two-step program scheme

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Epitaxial Integration of Tetragonal Bifeo3 with Silicon for Nonvolatile Memory Applications

Growth of High-Density Ir Nanocrystals by Atomic Layer Deposition for Nonvolatile Nanocrystal Memory Applications

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

Discrete Charge States In Nanowire Flash Memory With Multiple Ta2o5 Charge-Trapping Stacks

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Novel Silicon-Based Flash Cell Structures for Low Power and High Density Memory Applications

Optimization of Silicon Nanocrystals Growth Process by Low Pressure Chemical Vapor Deposition for Non-Volatile Memory Application

3D NAND Flash Memory Based on Double-Layer NC-Si Floating Gate with High Density of Multilevel Storage