Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Discrete Charge States In Nanowire Flash Memory With Multiple Ta2o5 Charge-Trapping Stacks

Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

Design and Fabrication of Ta$_{2}$O $_{5}$ Stacks for Discrete Multibit Memory Application

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Simulation of Charge Trapping Memory with Novel Structures

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

Atomic Layer Deposited Ta2O5-x Nano-Islands for Charge Trapping Memory Devices

Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

Ti–Al–O Nanocrystal Charge Trapping Memory Cells Fabricated by Atomic Layer Deposition

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Memory Devices: an Electric‐Field‐Controlled High‐Speed Coexisting Multibit Memory and Boolean Logic Operations in Manganite Nanowire Via Local Gating (adv. Electron. Mater. 6/2019)

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

Nonplanar NiSi Nanocrystal Floating-Gate Memory Based on a Triangular-Shaped Si Nanowire Array for Extending Nanocrystal Memory Scaling Limit

A TiAl2O5 Nanocrystal Charge Trap Memory Device