Abstract:The down-scaling of nanocrystal Si (nc-Si) floating gate memory must overcome the challenge of leakage current induced by the conventional ultra-thin tunnel layer. We demonstrate that an improved memory performance based on the Al/SiNx/nc-Si/Al2O3/Si structure can be achieved by adopting the Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition. A larger memory window of 7.9 V and better retention characteristics of 4.7 V after 105 s can be obtained compared with the devices containing a conventional SiO2 tunnel layer of equivalent thickness. The capacitance-voltage characteristic reveals that the Al2O3 tunnel layer has a smaller electron barrier height, which ensures that more electrons are injected into the nc-Si dots through the Al2O3/Si interface. The analysis of the conductance-voltage and high-resolution cross-section transmission microscopy reveals that the smaller nc-Si dots dominate in the charge injection in the nc-Si floating gate MOS device with an Al2O3 tunnel layer. With an increase of the nc-Si size, both nc-Si and the interface contribute to the charge storage capacity and retention. The introduction of the Al2O3 tunnel layer in nc-Si floating gate memory provides a method to achieve an improved performance of nc-Si floating gate memory.

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Double-level Charge Storage in Self-Aligned Doubly-Stacked Si Nanocrystals in SiN X Dielectric

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

Charge Storage Characteristics in Metal-Oxide-semiconductor Memory Structure Based on Gradual Ge1-xSix/Si Heteronanocrystals

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

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Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

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The Development of Nanometer Solid State Storage Memory

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Charge storage characteristics of silicon nanoclusters in silicon nitride matrix grown by laser assisted chemical vapor deposition method

Discrete Charge States In Nanowire Flash Memory With Multiple Ta2o5 Charge-Trapping Stacks