Abstract:Direct charge trapping memory, a new concept memory without any dielectric, has begun to attract attention. However, such memory is still at the incipient stage, of which the charge-trapping capability depends on localized electronic states that originated from the limited surface functional groups. To further advance such memory, a material with rich hybrid states is highly desired. Here, a van der Waals heterostructure design is proposed utilizing the 2D graphdiyne (GDY) which possesses abundant hybrid states with different chemical groups. In order to form the desirable van der Waals coupling, the plasma etching method is used to rapidly achieve the ultrathin 2D GDY with smooth surface for the first time. With the plasma-treated 2D GDY as charge-trapping layer, a direct charge-trapping memory based on GDY/MoS2 is constructed. This bilayer memory is featured with large memory window (90 V) and high degree of modulation (on/off ratio around 8 × 107). Two operating mode can be achieved and data storage capability of 9 and 10 current levels can be obtained, respectively, in electronic and opto-electronic mode. This GDY/MoS2 memory introduces a novel application of GDY as rich states charge-trapping center and offers a new strategy of realizing high performance dielectric-free electronics, such as optical memories and artificial synaptic.

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Charge-trapping characteristics of Al2O3/Cu/Al2O3 nanolaminate structures prepared through atomic layer deposition

Charge Storage Characteristics in Al/AlN/Si Metal–insulator–semiconductor Structure Based on Deep Traps in AlN Layer

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge_(1-x)Si_x/Si Heteronanocrystals

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

The Effect of the Thickness of Tunneling Layer on the Memory Properties of (cu2o)(0.5)(al2o3)(0.5) High-K Composite Charge-Trapping Memory Devices

Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

The Distinguished Charge-Trapping Capability of the Memory Device with Al 2 O 3 -Cu 2 O Composite As the Charge Storage Layer

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS 2 Van der Waals Heterostructure

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe2 Structure

Progress of Charge Trapping Layers in Charge Trapping Memories

Simulation of Charge Trapping Memory with Novel Structures

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Nonvolatile Memory Capacitors Based on Al2O3 Tunneling and HfO2 Blocking Layers with Charge Storage in Atomic-Layer-deposited Pt Nanocrystals

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Al 2 O 3 –cu 2 O Composite Charge-Trapping Nonvolatile Memory