Abstract:In recent years, research based on HfO 2 as a charge trap memory has become increasingly popular. This material, with its advantages of moderate dielectric constant, good interface thermal stability and high charge trap density, is currently gaining in prominence in the next generation of nonvolatile memory devices. In this study, memory devices based on a-IGZO thin-film transistor (TFT) with HfO 2 /Al 2 O 3 /HfO 2 charge trap layer (CTL) were fabricated using atomic layer deposition. The effect of the Al 2 O 3 layer thickness (1, 2, and 3 nm) in the CTL on memory performance was studied. The results show that the device with a 2-nm Al 2 O 3 layer in the CTL has a 2.47 V memory window for 12 V programming voltage. The use of the HfO 2 /Al 2 O 3 /HfO 2 structure as a CTL lowered the concentration of electrons near the tunnel layer and the loss of trapped electrons. At room temperature, the memory window is expected to decrease by 0.61 V after 10 years. The large storage window (2.47 V) and good charge retention (75.6% in 10 years) of the device under low-voltage conditions are highly advantageous. The charge retention of the HfO 2 /Al 2 O 3 /HfO 2 trap layer affords a feasible method for fabricating memory devices based on a-IGZO TFT.

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

The Distinguished Charge-Trapping Capability of the Memory Device with Al 2 O 3 -Cu 2 O Composite As the Charge Storage Layer

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

The Dominant Factors Affecting the Memory Characteristics of (ta2o5)x(al2o3)1−x High-K Charge-Trapping Devices

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

The Effect of the Thickness of Tunneling Layer on the Memory Properties of (cu2o)(0.5)(al2o3)(0.5) High-K Composite Charge-Trapping Memory Devices

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Al 2 O 3 –cu 2 O Composite Charge-Trapping Nonvolatile Memory

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Ultrathin HfON/SiO2 Dual Tunneling Layer for Improving the Electrical Properties of Metal–oxide–nitride–oxide–silicon Memory

Improved Performances of Metal-Oxide-Nitride-Oxide-Silicon Memory with Hftion As Charge-Trapping Layer

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices