Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

C. Y. Wei,B. Shen,P. Ding,P. Han,A. D. Li,Y. D. Xia,B. Xu,J. Yin,Z. G. Liu

DOI: https://doi.org/10.1038/s41598-017-05248-6

IF: 4.6

2017-01-01

Scientific Reports

Abstract:The charge-trapping memory devices with a structure Pt/Al 2 O 3 /(Ta 2 O 5 ) x (TiO 2 ) 1 − x /Al 2 O 3 /p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate was designed to enhance the memory performance by controlling the composition and dielectric constant of the charge-trapping layer and reducing the difference of the potentials at the bottom of the conduction band between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate. The memory device with a composite charge storage layer (Ta 2 O 5 ) 0.5 (TiO 2 ) 0.5 shows a density of trapped charges 3.84 × 10 13 /cm 2 at ± 12 V, a programming/erasing speed of 1 µs at ± 10 V, a 8% degradation of the memory window at ± 10 V after 10 4 programming/erasing cycles and a 32% losing of trapped charges after ten years. The difference among the activation energies of the trapped electrons in (Ta 2 O 5 ) x (TiO 2 ) 1 − x CTM devices indicates that the retention characteristics are dominated by the difference of energy level for the trap sites in each TTO CTM device.