Abstract:The charge-trapping memory devices with a structure Pt/Al 2 O 3 /(Ta 2 O 5 ) x (TiO 2 ) 1 − x /Al 2 O 3 /p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate was designed to enhance the memory performance by controlling the composition and dielectric constant of the charge-trapping layer and reducing the difference of the potentials at the bottom of the conduction band between (Ta 2 O 5 ) x (TiO 2 ) 1 − x and Si substrate. The memory device with a composite charge storage layer (Ta 2 O 5 ) 0.5 (TiO 2 ) 0.5 shows a density of trapped charges 3.84 × 10 13 /cm 2 at ± 12 V, a programming/erasing speed of 1 µs at ± 10 V, a 8% degradation of the memory window at ± 10 V after 10 4 programming/erasing cycles and a 32% losing of trapped charges after ten years. The difference among the activation energies of the trapped electrons in (Ta 2 O 5 ) x (TiO 2 ) 1 − x CTM devices indicates that the retention characteristics are dominated by the difference of energy level for the trap sites in each TTO CTM device.

The Distinguished Charge-Trapping Capability of the Memory Device with Al 2 O 3 -Cu 2 O Composite As the Charge Storage Layer

Al 2 O 3 –cu 2 O Composite Charge-Trapping Nonvolatile Memory

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

The Dominant Factors Affecting the Memory Characteristics of (ta2o5)x(al2o3)1−x High-K Charge-Trapping Devices

The Effect of the Thickness of Tunneling Layer on the Memory Properties of (cu2o)(0.5)(al2o3)(0.5) High-K Composite Charge-Trapping Memory Devices

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Charge-trapping characteristics of Al2O3/Cu/Al2O3 nanolaminate structures prepared through atomic layer deposition

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Nonvolatile Memory Capacitors Based on Al2O3 Tunneling and HfO2 Blocking Layers with Charge Storage in Atomic-Layer-deposited Pt Nanocrystals

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Ti–Al–O Nanocrystal Charge Trapping Memory Cells Fabricated by Atomic Layer Deposition

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Comparative Study on the Charge-Trapping Properties of TaAlO and ZrAlO High-K Composites with Designed Band Alignment