Abstract:Charge trapping memory (CTM) boasts numerous advantages over conventional flash memory, making it a suitable alternative. In this work, atomic layer-deposited Ta2O5-x nano-islands were employed as charge trapping units in a Pt/Al2O3/Ta2O5-x nano-island/Al2O3/Si structure for data storage. The effect of the dimension and areal density of Ta2O5-x nano-islands on memory characteristics was investigated by tuning growth cycles. It was found that the surface of Al2O3 as a tunneling layer has the most abundant active groups (-OH), which facilitate the nucleation and growth of Ta2O5-x. The measured areal density of Ta2O5-x nano-islands was 6.30 x 10(11) cm(-2) after 20 cycles with an average width and height of 10.8 and 1.4 nm, respectively. The memory cell with 20-cycle Ta2O5-x nano-islands exhibits optimal charge storage capability with a memory window of 5.8 V and charge storage density of 1.11 x 10(13) cm(-2) at +/- 12 V sweeping voltage, which is superior to the control sample with a 50-cycle continuous Ta2O5-x thin film. The cell also manifests fast program/erase speed, excellent endurance properties and acceptable retention characteristics. Moreover, the Ta2O5-x nano-island CTM device shows promising potential as an optoelectronic synaptic device or photodetector.

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

The Dominant Factors Affecting the Memory Characteristics of (ta2o5)x(al2o3)1−x High-K Charge-Trapping Devices

Atomic Layer Deposited Ta2O5-x Nano-Islands for Charge Trapping Memory Devices

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Ti–Al–O Nanocrystal Charge Trapping Memory Cells Fabricated by Atomic Layer Deposition

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

The Distinguished Charge-Trapping Capability of the Memory Device with Al 2 O 3 -Cu 2 O Composite As the Charge Storage Layer

Comparative Study on the Charge-Trapping Properties of TaAlO and ZrAlO High-K Composites with Designed Band Alignment

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Band-Alignment Dominated Retention Behaviors In High-K Composite Charge-Trapping Memory Devices

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application