Abstract:In recent years, research based on HfO 2 as a charge trap memory has become increasingly popular. This material, with its advantages of moderate dielectric constant, good interface thermal stability and high charge trap density, is currently gaining in prominence in the next generation of nonvolatile memory devices. In this study, memory devices based on a-IGZO thin-film transistor (TFT) with HfO 2 /Al 2 O 3 /HfO 2 charge trap layer (CTL) were fabricated using atomic layer deposition. The effect of the Al 2 O 3 layer thickness (1, 2, and 3 nm) in the CTL on memory performance was studied. The results show that the device with a 2-nm Al 2 O 3 layer in the CTL has a 2.47 V memory window for 12 V programming voltage. The use of the HfO 2 /Al 2 O 3 /HfO 2 structure as a CTL lowered the concentration of electrons near the tunnel layer and the loss of trapped electrons. At room temperature, the memory window is expected to decrease by 0.61 V after 10 years. The large storage window (2.47 V) and good charge retention (75.6% in 10 years) of the device under low-voltage conditions are highly advantageous. The charge retention of the HfO 2 /Al 2 O 3 /HfO 2 trap layer affords a feasible method for fabricating memory devices based on a-IGZO TFT.

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2o3/Hfo2/Al2o3 Tunnel Barrier

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

High Density And Program-Erasable Metal-Insulator-Silicon Capacitor With A Dielectric Structure Of Sio2/Hfo2-Al2o3 Nanolaminate/Al2o3

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO2-Al2O3 Multilayer and Hafnium Nitride Gate

Nonvolatile Memory Capacitors Based on Al2O3 Tunneling and HfO2 Blocking Layers with Charge Storage in Atomic-Layer-deposited Pt Nanocrystals

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Effects of Composition on the Memory Characteristics of (Hfo2)x(al2o3)1-Xbased Charge Trap Nonvolatile Memory

Low Voltage Program-Erasable Pd-Al2o3-Si Capacitors with Ru Nanocrystals for Nonvolatile Memory Application

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications