Low Voltage Program-Erasable Pd-Al2o3-Si Capacitors with Ru Nanocrystals for Nonvolatile Memory Application

Lan,Gou Hong-Yan,Ding Shi-Jin,Zhang Wei

DOI: https://doi.org/10.1088/1674-1056/22/11/117308

2013-01-01

Chinese Physics B

Abstract:Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application. While keeping the entire insulator Al2O3 thickness fixed, the memory window has a strong dependence on the tunneling layer thickness under low operating voltages, whereas it has weak dependence under high operating voltages. As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer, the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10−5 s to 10−2 s under ±7 V. A ten-year memory window as large as 5.2 V is extrapolated at room temperature after ±8 V/1 ms programming/erasing pulses.