Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Xu-Dong Weng,Qing-Qing Sun,An-Quan Jiang,David-Wei Zhang

DOI: https://doi.org/10.1007/s10832-010-9612-9

2010-01-01

Journal of Electroceramics

Abstract:Polarization-voltage (P-V) hysteresis loops and polarization retention were studied for Au/Pb(Zr0.96Ti0.04)O3/Al2O3/Pt antiferroelectric capacitors with different Al2O3 layer thicknesses. The high-field ferroelectric phase after poling can be pertained to zero external field with the choice of an appropriate Al2O3 layer thickness. At the same time, a strong depolarization field across the Al2O3 layer is generated with the direction opposite to the field across the Pb(Zr0.96Ti0.04)O3 layer. The depolarization-field direction can be reversed with the domain switching of the high-field ferroelectric phase, possessing the potential application of antiferroelectric memories. A large memory window of 10 V was observed for Au/Pb(Zr0.96Ti0.04)O3 (50 nm)/Al2O3 (6.3 nm)/n-Si (100) field-effect transistors, as confirmed from the capacitance sweeping under voltages between −19 and +19 V. The high/low capacitance ratio is over 8:1, and the ratio remains stable with time over 4 h after programming voltage of ±19 V at 80°C, in suggestion of the excellent retention of the memory.