Abstract:HfO2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most promising non-volatile memory technologies in the future. However, the charge trapping phenomenon during the program/erase operation is still a challenge. In this work, we comprehensively investigate the behaviors of semiconductor/insulator interface charge trapping in HfO2-based FeFETs. Through analyzing the effects of the spatial distribution of interface traps and the polarization switching speed, the coupling effects of semiconductor/insulator interface charge trapping and polarization switching are recognized. We also find that the band tail state traps have much less influence on the electrical characteristics of the FeFETs than the deep level state traps. Through engineering the devices with band tail state traps with concentrations as small as possible, the influences of charge trapping could be effectively suppressed. Moreover, the gate voltage (VG) scanning rate has a significant influence on the interface charge trapping process due to the time dependent change of ferroelectric polarization. The largest memory window could be obtained by carefully choosing the VG scanning rate of the FeFETs based on the polarization switching speed. This work represents a key step for realizing highly reliable HfO2-based FeFETs.

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO2-Al2O3 Multilayer and Hafnium Nitride Gate

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO 2 Dielectric

High Density And Program-Erasable Metal-Insulator-Silicon Capacitor With A Dielectric Structure Of Sio2/Hfo2-Al2o3 Nanolaminate/Al2o3

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application

Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications.

Investigation on Memory Effect of Mos Capacitors with Al-2 O-3/Pt-Nanocrystals/Hfo2

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

MoS2-based Ferroelectric Field-Effect Transistor with Atomic Layer Deposited Hf0.5Zr0.5O2 Films Toward Memory Applications

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

Memory Behavior of an Al 2 O 3 Gate Dielectric Non-Volatile Field-Effect Transistor

C–V Characteristics of Pt/PbZr0.53Ti0.47O3/LaAlO3/Si and Pt/PbZr0.53Ti0.47O3/La0.85Sr0.15CoO3/LaAlO3/Si Structures for Ferroelectric Gate FET Memory