Abstract:In the last decade, HfO2-based ferroelectric capacitors (FeCaps) have undergone significant advancements, particularly within the realm of nonvolatile ferroelectric random access memories (FeRAMs). Nonetheless, the READ operation in FeRAMs is inherently destructive, rendering it unsuitable for neuromorphic computing. In this study, we have engineered tunable nonvolatile capacitances within FeCaps, featuring nondestructive readout functionality. Robust capacitance states can be read at a zero d.c. bias (Vbias) with different a.c. signals, not only preventing the alteration of their stored state but also benefiting to the low power consumption. Moreover, the capacitance memory window (CMW) at Vbias of zero can be effectively modulated through electrode engineering, leading to a larger CMW when there is a greater disparity in work functions between the electrodes. Furthermore, we provide a comprehensive investigation into synaptic behavior of TiN/Hf0.5Zr0.5O2/Pt FeCaps, demonstrating their excellent cycle-to-cycle uniformity, retention, and endurance characteristics, which confirm their high reliability in maintaining nonvolatile capacitance states. These findings underscore the significant potential of FeCaps in advancing low-power neuromorphic computing.

Memory Effect of Metal-Insulator-Silicon Capacitor with HfO2-Al2O3 Multilayer and Hafnium Nitride Gate

High Density And Program-Erasable Metal-Insulator-Silicon Capacitor With A Dielectric Structure Of Sio2/Hfo2-Al2o3 Nanolaminate/Al2o3

Memory Effect of Metal—Insulator—Silicon Capacitors with SiO<sub>2</sub>/HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics

Memory effect of metal - Insulator - Silicon capacitors with SiO 2/HfO2/Al2O3 dielectrics

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO 2 Dielectric

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Enhanced Memory Properties of HfO2-based Ferroelectric Capacitor by Inserting Al2O3/ZrO2 Stack Interfacial Layer

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Investigation on Memory Effect of Mos Capacitors with Al-2 O-3/Pt-Nanocrystals/Hfo2

Robust Low Voltage Program-Erasable Cobalt-Nanocrystal Memory Capacitors with Multistacked Al2o3/Hfo2/Al2o3 Tunnel Barrier

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Multi-state Nonvolatile Capacitances in HfO2-based Ferroelectric Capacitor for Neuromorphic Computing

Low Voltage Program-Erasable Pd-Al2o3-Si Capacitors with Ru Nanocrystals for Nonvolatile Memory Application

Ferroelectric Transistors with Monolayer Molybdenum Disulfide and Ultra-Thin Aluminum-Doped Hafnium Oxide

Charge Retention in Metal–oxide–semiconductor Capacitors on SiC Used As Nonvolatile-Memory Elements

Characteristics of Metal-Pb(Zr0.53Ti0.47)O3-TiO2-Si capacitor for nonvolatile memory applications.

Coexistence of High Performance Resistance and Capacitance Memory Based on Multilayered Metal-Oxide Structures

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2

Enabling the wide memory window and long endurance in hafnia-based FeFET from the perspective of interfacial layer

Characterization of Au/Pb(Zr 0.96 Ti 0.04 )O 3 /al 2 O 3 /si Antiferroelectric Field-Effect Transistors for Memory Application