Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Comparison of Discrete-Storage Nonvolatile Memories: Advantage of Hybrid Method for Fabrication of Au Nanocrystal Nonvolatile Memory

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

A Hybrid Method for Fabrication of Au Nanocrystals Nonvolatile Memory

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Capacitance Characteristics of Metal-Oxide-semiconductor Capacitors with a Single Layer of Embedded Nickel Nanoparticles for the Application of Nonvolatile Memory

Investigation on Memory Effect of Mos Capacitors with Al-2 O-3/Pt-Nanocrystals/Hfo2

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO 2 Dielectric

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

An interesting phenomenon in the C-V measurements of nanocrystal based MOS capacitor

Performance and reliability feature of nanocrystal memory devices

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Silicon Nano-Crystals Based Mos Memory and Effects of Traps on Charge Storage Characteristics

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure