Abstract:In this article, we investigate the storage enhancement mechanism of stacked multilayer nanocrystallite silicon (nc-Si) structures in a master-equation-based equivalent circuit model. As a theoretical extension from our previous experimental works, we reveal the detail injection sequence of electrons into the multilayer nc-Si structure via a direct tunneling process, and how the retention property is enhanced by the stacked structures. Seeking a further improvement in the multilayer nc-Si-based nonvolatile memory structure, we compare two major approaches for that purpose, i.e. (1) by further increasing the number of stacked layers or (2) by adopting an asymmetric double-layer structure. It is shown that the latter is more promising for achieving better nonvolatile storage property and shows a more effective threshold shifting, while retaining the virtues of direct tunneling process like fast write/erase and low operation voltage. We suggest that these results provide important guides for practical design of memory devices based on multilayer nc-Si floating gate structures.

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

Electrothermal Simulation of Single-Walled Carbon Nanotube (Swcnt)-Based Phase Change Memory for 3-Dics

Impact of Quantum Confinement and Coulomb Blockade on the retention of nanocrystals based charge trapping memory

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach

Simulation of Electron Storage in Ge/Si Hetero-Nanocrystal Memory

Performance and reliability feature of nanocrystal memory devices

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention

Comparison of Discrete-Storage Nonvolatile Memories: Advantage of Hybrid Method for Fabrication of Au Nanocrystal Nonvolatile Memory

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Enhanced Retention Characteristic Of Nisi2/Sinx Compound Nanocrystal Memory

Simulation Study on Charge Storage Characteristics of Ge/Si Nanocrystal Memory

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots