Abstract:Memristor with low-power, high density, and scalability fulfills the requirements of the applications of the new computing system beyond Moore's law. However, there are still nonideal device characteristics observed in the memristor to be solved. The important observation is that retention and speed are correlated parameters of memristor with trade off against each other. The delicately modulating distribution and trapping level of defects in electron migration-based memristor is expected to provide a compromise method to address the contradictory issue of improving both switching speed and retention capability. Here, high-performance memristor based on the structure of ITO/Ni single-atoms (NiSAs/N-C)/Polyvinyl pyrrolidone (PVP)/Au is reported. By utilizing well-distributed trapping sites , small tunneling barriers/distance and high charging energy, the memristor with an ultrafast switching speed of 100 ns, ultralong retention capability of 106 s, a low set voltage (Vset ) of ≈0.7 V, a substantial ON/OFF ration of 103 , and low spatial variation in cycle-to-cycle (500 cycles) and device-to-device characteristics (128 devices) is demonstrated. On the premise of preserving the strengths of a fast switching speed, this memristor exhibits ultralong retention capability comparable to the commercialized flash memory. Finally, a memristor ratioed logic-based combinational memristor array to realize the one-bit full adder is further implemented.

Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots

Simulation Study on Charge Storage Characteristics of Ge/Si Nanocrystal Memory

Simulation of Electron Storage in Ge/Si Hetero-Nanocrystal Memory

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array

Simulation of A Triple-Gate Single Electron Fet Memory with A Quantum Dot Floating Gate and A Quantum Wire Channel

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Hole Storage Characteristics in Ge/Si Hetero-Nanocrystal-Based Memories

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

High-Fidelity Quantum Memory Utilizing Inhomogeneous Nuclear Polarization in A Quantum Dot

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling

Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Ni Single-Atoms Based Memristors with Ultrafast Speed and Ultralong Data Retention