Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Guo Tingting,Liu Ming,Guan Weihua,Hu Yuan,Li Zhigang,Long Shibing,Chen Junning

DOI: https://doi.org/10.3969/j.issn.1671-4776.2009.02.002

2009-01-01

Abstract:The data retention performances of nanocrystal floating gate memories were introduced.The nanocrystal selection,fabrication and tunneling barrier engineering were emphatically discussed.It is proved that metal nanocrystal floating gate memories have better retention performances than semiconductor nanocrystal floating gate memories.Fabrication of the metal nanocrystal is simple,and the better metal nanocrystal is gained by the electron beam evaporation and the post-thermal annealing,the dendity is about 4×1011 cm-2,the nanocrstal size is about 6-7 nm.The experiment proves that high-k tunneling dielectric can improve the retention performance of the floating gate memory.It is found that non-volatile memories utilizing nanocrystals show promising characteristics as a candidate for the next generation memories,especially when metal nanocrystals and high-k tunneling dielectrics are adopted.