Abstract:The demand for increased information storage densities has pushed silicon technology to its limits and led to a focus on research on novel materials and device structures, such as magnetoresistive random access memory1,2,3 and carbon nanotube field-effect transistors4,5,6,7,8,9, for ultra-large-scale integrated memory10. Electromechanical devices are suitable for memory applications because of their excellent ‘ON–OFF’ ratios and fast switching characteristics, but they involve larger cells and more complex fabrication processes than silicon-based arrangements11,12,13. Nanoelectromechanical devices based on carbon nanotubes have been reported previously14,15,16,17, but it is still not possible to control the number and spatial location of nanotubes over large areas with the precision needed for the production of integrated circuits. Here we report a novel nanoelectromechanical switched capacitor structure based on vertically aligned multiwalled carbon nanotubes in which the mechanical movement of a nanotube relative to a carbon nanotube based capacitor defines ‘ON’ and ‘OFF’ states. The carbon nanotubes are grown with controlled dimensions at pre-defined locations on a silicon substrate in a process that could be made compatible with existing silicon technology, and the vertical orientation allows for a significant decrease in cell area over conventional devices. We have written data to the structure and it should be possible to read data with standard dynamic random access memory sensing circuitry. Simulations suggest that the use of high-k dielectrics in the capacitors will increase the capacitance to the levels needed for dynamic random access memory applications.

High-Performance Non-Volatile Cds Nanobelt-Based Floating Nanodot Gate Memory

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Performance Enhancement of Metal Floating Gate Memory by Using A Bandgap Engineered High-K Tunneling Barrier

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

Metal Floating Gate Memory Device with SiO 2 /hfo 2 Dual-Layer As Engineered Tunneling Barrier

Nanoscale Memory Cell Based on a Nanoelectromechanical Switched Capacitor

Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

Multilayer Graphene Nanoribbon and Carbon Nanotube Based Floating Gate Transistor for Nonvolatile Flash Memory

Metal Nanogap Memory: Performances and Switching Mechanism

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Carbon Nanotube Based Non-Volatile Memory and Charge Sensors

Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.

High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites

Nonvolatile Memory from Single-Walled Carbon Nanotube-Based Field Effect Transistors

Nanosheet-Compatible Complementary-Field Effect Transistor Logic Non-Volatile Memory Device