Abstract:Schematic of the WS2/h‐BN/WS2 sandwich FGFET device structure with highly n‐doped Si wafer with 300 nm SiO2 is used as the substrate and energy band diagram of the FGFET at the program state. The FGFET can achieve two mode programming state by changing the type of metal‐semiconductor contact when the floating gate applies positive and negative voltage. Research on van der Waals heterostructures based on stacked two‐dimensional atomic thickness crystals has received considerable attention because of their unique characters and great potential applications in flexible transparent electronics and optoelectronics. In this study, a nonvolatile memory device with a few‐layer bipolar material WS2 as channel and charge‐trapping layers is designed with a floating‐gate structure in which charges (electrons and holes) can be stored in the charge‐trapping layer using a dual‐mode processing program by changing the metal–semiconductor contact type. The device exhibits different programming currents during programming, in particular, the device has a low programming current for programming voltages ˂20 V. Moreover, the heterostructure exhibits a remarkable long retention time (≈10,000 s), with no apparent degradation and a strong endurance, retaining its original performance even after 1,000 programming/erasing cycles. This study proposes a novel method for reducing power consumption while programming to facilitate artificial synapse applications.

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