Abstract:Three-dimensional NAND flash memory with high carrier injection efficiency has been of great interest to computing in memory for its stronger capability to deal with big data than that of conventional von Neumann architecture. Here, we first report the carrier injection efficiency of 3D NAND flash memory based on a nanocrystalline silicon floating gate, which can be controlled by a novel design of the control layer. The carrier injection efficiency in nanocrystalline Si can be monitored by the capacitance–voltage (C–V) hysteresis direction of an nc-Si floating-gate MOS structure. When the control layer thickness of the nanocrystalline silicon floating gate is 25 nm, the C–V hysteresis always maintains the counterclockwise direction under different step sizes of scanning bias. In contrast, the direction of the C–V hysteresis can be changed from counterclockwise to clockwise when the thickness of the control barrier is reduced to 22 nm. The clockwise direction of the C–V curve is due to the carrier injection from the top electrode into the defect state of the SiNx control layer. Our discovery illustrates that the thicker SiNx control layer can block the transfer of carriers from the top electrode to the SiNx, thereby improving the carrier injection efficiency from the Si substrate to the nc-Si layer. The relationship between the carrier injection and the C–V hysteresis direction is further revealed by using the energy band model, thus explaining the transition mechanism of the C–V hysteresis direction. Our report is conducive to optimizing the performance of 3D NAND flash memory based on an nc-Si floating gate, which will be better used in the field of in-memory computing.

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

Charge Retention Enhancement in Stack Nanocrystalline-Si Based Metal-Insulator-semiconductor Memory Structure

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

The Development of Nanometer Solid State Storage Memory

Simulation of A Triple-Gate Single Electron Fet Memory with A Quantum Dot Floating Gate and A Quantum Wire Channel

Simulation of Electron Storage in Ge/Si Hetero-Nanocrystal Memory

Large Storage Window in A-Sinx/Nc-Si/A-Sinx Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Multi-Dot Floating-Gates for Nonvolatile Semiconductor Memories - Their Ion Beam Synthesis and Morphology

Modeling of High-k Gate Stack of Tunnel Barrier in Nonvolatile Memory MOS Structures

Ultrathin HfON/SiO2 Dual Tunneling Layer for Improving the Electrical Properties of Metal–oxide–nitride–oxide–silicon Memory

Simulation of Charge Trapping Memory with Novel Structures

Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

Superior Endurance Performance Of Nonvolatile Memory Devices Based On Discrete Storage In Surface-Nitrided Si Nanocrystals

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Controlling the Carrier Injection Efficiency in 3D Nanocrystalline Silicon Floating Gate Memory by Novel Design of Control Layer

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Discrete Charge States In Nanowire Flash Memory With Multiple Ta2o5 Charge-Trapping Stacks