Abstract:Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS) scaling technology in recent years, innovation in transistor structures and integration of novel materials has been a key to enhancing the performance of CMOS field-effect transistors (FETs) of past technology generations. Tremendous progress of high dielectric constant (high-k) gate stacks has been made in recent years and some of them have come into application in CMOS devices. However, many challenges remain, such as: (a) suitable permittivity, band gap and band alignment for dielectrics, on Si, (b) thermodynamic stability and interface engineering at both high-k/Si interface and metal/metal interface, (c) depletion effect, high gate resistance and its incompatibility with high-k for metal gate, and (d) low performance attributed to threshold voltage instability. Based on current progress and fundamental considerations, we review the current status and challenges in novel high-k dielectrics and metal gates research for planar CMOS devices and alternative device technologies to provide insights for future research. Finally, this review concludes with perspectives towards the future gate stack technology and challenges in advanced CMOS devices.

Modeling of High-k Gate Stack of Tunnel Barrier in Nonvolatile Memory MOS Structures

Modeling of High-k Gate Stack of Tunnel Barrier in Nonvolatile Memory MOS Structures

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Modeling of Gate Tunneling Current for Nanoscale MOSFETs with High-k Gate Stacks

Gate current modeling of high-k stack nanoscale MOSFETs

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Modeling of Gate Current and Capacitance for Nanoscale MOSFETs with High-k Stacks

Modeling of Tunneling Current Through Hf-based Dielectric Films for Nanoscale MOSFET

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

A novel structure designed for high density nonvolatile memory devices

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Performance Enhancement of Metal Floating Gate Memory by Using A Bandgap Engineered High-K Tunneling Barrier

Application of High-k Dielectrics to Floating Gate Nonvolatile Memory

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Modeling the Underlying Mechanisms for Organic Memory Devices: Tunneling, Electron Emission and Oxygen Adsorbing

Programming/Erasing Characteristics of Hysteresis-Based Nonvolatile Memory Devices of Single-Wall Carbon Nanotubes

Performance Improvement of Nc-Si Nonvolatile Memory by Novel Design of Tunnel and Control Layer

Integrations and Challenges of Novel High-K Gate Stacks in Advanced CMOS Technology

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

Reduction of Gate Current in Nanoscale MOS Devices

Compact Modeling of Dynamic Threshold Voltage of Nanoscale FinFET High K Gate Stack and Application in Circuit Simulation