Abstract:The decreasing feature sizes in complementary metal-oxide semiconductor (CMOS) transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant (high-k) because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomicscale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy (HRTEM) and the related techniques based on scanning transmission electron microscopy (STEM), including high-angle annular darkfield (HAADF) imaging (also known as Z-contrast imaging), electron energy-loss spectroscopy (EELS), and energy dispersive X-ray spectroscopy (EDS), due to that HRTEM and STEM have become essential metrology tools for characterizing the dielectric gate stacks in the present and future generations of CMOS devices. In Section 1 of this review, the working principles of each technique are briefly introduced and their key features are outlined. In Section 2, microstructural characterizations of high-k gate dielectrics at atomic-scale by electron microscopy are critically reviewed by citing some recent results reported on high-k gate dielectrics. In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with personal perspectives towards the future challenges of atomic-scale material characterization in advanced CMOS gate stacks.

Application of High-k Dielectrics to Floating Gate Nonvolatile Memory

Application of High Dielectric Constant Materials in Memory Devices

Recent Progress in High K Gate Dielectrics

Modeling of High-k Gate Stack of Tunnel Barrier in Nonvolatile Memory MOS Structures

Performance Enhancement of Metal Floating Gate Memory by Using A Bandgap Engineered High-K Tunneling Barrier

Progress of High-K Dielectrics Applicable to Sonos-Type Nonvolatile Semiconductor Memories

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 Nm

Development Trend of High Dielectric Constant Materials

A novel structure designed for high density nonvolatile memory devices

Unipolar Resistance Switching in Amorphous High-k dielectrics Based on Correlated Barrier Hopping Theory

Nonvolatile Ferroelectric Field-Effect Transistors.

Research Progress of Floating Gate Type Organic Nonvolatile Memories

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Metal Floating Gate Memory Device with SiO 2 /hfo 2 Dual-Layer As Engineered Tunneling Barrier

Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure

Challenges in Atomic-Scale Characterization of High-k Dielectrics and Metal Gate Electrodes for Advanced CMOS Gate Stacks

A Semi-Floating Gate Memory Based on Van Der Waals Heterostructures for Quasi-Non-volatile Applications

Simulation,Fabrication and Electrical Characteristics of Nanocrystal Floating Gate Memories

High-Performance C 60 Coupled Ferroelectric Enhanced MoS 2 Nonvolatile Memory

Progress of Studies on High Dielectric Constant Materials As Gate Dielectrics