Abstract:Ferroelectric field-effect transistors (FeFETs) with semiconductors as the channel material and ferroelectrics as the gate insulator are attractive and/or promising devices for application in nonvolatile memory. In FeFETs, the conductivity states of the semiconductor are utilized to explore the polarization directions of the ferroelectric material. Herein, we report FeFETs based on a few layers of MoS2 on a 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN–PT) single crystal with switchable multilevel states. It was found that the On–Off ratios can reach as high as 106. We prove that the interaction effect of ferroelectric polarization and interface charge traps has a great influence on the transport behaviors and nonvolatile memory characteristics of MoS2/PMN–PT FeFETs. In order to further study the underlying physical mechanism, we have researched the time-dependent electrical properties in the temperature range from 300 to 500 K. The separation of effects from ferroelectric polarization and interfacial traps on electrical behaviors of FeFETs provides us with an opportunity to better understand the operation mechanism, which suggests a fantastic way for multilevel, low-power consumption, and high-density nonvolatile memory devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09951?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09951</a>.In-plane strain curve for the (001)-oriented PMN–PT crystal (Figure S1); the transfer characteristic curves of MoS2–PMN–PT FeFETs (Figures S2 and S3); data retention characteristics of MoS2–PMN–PT FeFETs (Figure S4); measurement-temperature-dependent transport properties of MoS2–PMN–PT FeFETs in the range from 150 to 300 K (Figure S5) (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09951/suppl_file/am0c09951_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

High-k polymer dielectrics with different cross-linked networks for nonvolatile transistor memory device

Semi-conjugated acceptor-based polyimides as electrets for nonvolatile transistor memory devices

High‐Performance Pentacene‐Based Field‐Effect Transistor Memory Using the Electrets of Polymer Blends

High-performance flexible pentacene transistor memory with PTCDI-C<sub>13</sub> as N-type buffer layer

Fluorene Based Donor-Acceptor Polymer Electrets For Nonvolatile Organic Transistor Memory Device Applications

A flexible floating-gate based organic field-effect transistor non-volatile memory based on F8BT/PMMA integrated floating-gate/tunneling layer

High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate Insulator

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer

Improved Capacitive Energy Storage at High Temperature via Constructing Physical Cross‐Link and Electron–Hole Pairs Based on P‐Type Semiconductive Polymer Filler

Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

High-performance non-volatile field-effect transistor memories using an amorphous oxide semiconductor and ferroelectric polymer

Conjugated Polymer Nanoparticles as Nano Floating Gate Electrets for High Performance Nonvolatile Organic Transistor Memory Devices

Ferroelectric-Modulated MoS 2 Field-Effect Transistors as Multilevel Nonvolatile Memory

Application of High Dielectric Constant Materials in Memory Devices

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

Charge-Storage Aromatic Amino Compounds for Nonvolatile Organic Transistor Memory Devices

Ferroelectric Field-Effect Transistors for Logic and In-Situ Memory Applications

Solution-processed flexible nonvolatile organic field-effect transistor memory using polymer electret