Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

Sub-6V Operation of Split-Gate Type Charge-Trapping Nonvolatile Memory with High-k Trapping and Blocking Layers for High-Speed and HighlyReliable Embedded Flash

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

High-performance Amorphous In-Ga-Zn-O Thin-Film Transistor Nonvolatile Memory with a Novel P-Sno/n-sno2 Heterojunction Charge Trapping Stack

Transparent multi-level-cell nonvolatile memory with dual-gate amorphous indium-gallium-zinc oxide thin-film transistors

Simulation of Charge Trapping Memory with Novel Structures

Titanium–tungsten Nanocrystals Embedded in a SiO2/Al2O3gate Dielectric Stack for Low-Voltage Operation in Non-Volatile Memory

The Charge Storage Characteristics of Zro2 Nanocrystallite-Based Charge Trap Nonvolatile Memory

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

New Nanocrystalline Si Floating Gate Structue for Nonvolatile Memory Application

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Demonstration of Α-Ingazno TFT Nonvolatile Memory Using TiAlO Charge Trapping Layer

Performance Enhancement Of Multilevel Cell Nonvolatile Memory By Using A Bandgap Engineered High-Kappa Trapping Layer

High Performance Organic Nonvolatile Memory Transistors Based On Hfo2 And Poly(Alpha-Methylstyrene) Electret Hybrid Charge-Trapping Layers

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Novel Multi-Bit Non-Uniform Channel Charge Trapping Memory Device with Virtual-Source Nand Flash Array

Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

Low-voltage Ultrafast Nonvolatile Memory Via Direct Charge Injection Through a Threshold Resistive-Switching Layer

Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide