Abstract:In recent years, research based on HfO 2 as a charge trap memory has become increasingly popular. This material, with its advantages of moderate dielectric constant, good interface thermal stability and high charge trap density, is currently gaining in prominence in the next generation of nonvolatile memory devices. In this study, memory devices based on a-IGZO thin-film transistor (TFT) with HfO 2 /Al 2 O 3 /HfO 2 charge trap layer (CTL) were fabricated using atomic layer deposition. The effect of the Al 2 O 3 layer thickness (1, 2, and 3 nm) in the CTL on memory performance was studied. The results show that the device with a 2-nm Al 2 O 3 layer in the CTL has a 2.47 V memory window for 12 V programming voltage. The use of the HfO 2 /Al 2 O 3 /HfO 2 structure as a CTL lowered the concentration of electrons near the tunnel layer and the loss of trapped electrons. At room temperature, the memory window is expected to decrease by 0.61 V after 10 years. The large storage window (2.47 V) and good charge retention (75.6% in 10 years) of the device under low-voltage conditions are highly advantageous. The charge retention of the HfO 2 /Al 2 O 3 /HfO 2 trap layer affords a feasible method for fabricating memory devices based on a-IGZO TFT.

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Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

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Performance Enhancement of Metal Floating Gate Memory by Using A Bandgap Engineered High-K Tunneling Barrier

Retention Enhancement in Low Power NOR Flash Array with High-κ–Based Charge-Trapping Memory by Utilizing High Permittivity and High Bandgap of Aluminum Oxide

Band-Alignment Dominated Retention Behaviors In High-K Composite Charge-Trapping Memory Devices

Multipeak Coercive Electric-Field-Based Multilevel Cell Nonvolatile Memory With Antiferroelectric-Ferroelectric Field-Effect Transistors (FETs)

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Impact of the Interfaces in the Charge Trap Layer on the Storage Characteristics of ZrO2/Al2O3 Nanolaminate-Based Charge Trap Flash Memory Cells

Effects of Composition on the Memory Characteristics of (Hfo2)x(al2o3)1-Xbased Charge Trap Nonvolatile Memory

Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

Simulation of Charge Trapping Memory with Novel Structures

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells