Abstract:For the development of memory devices for the continuous advancement of IT engineering, a good understanding of the charging–discharging mechanisms in nanocrystalline floating gate memories is crucial to overcoming the current limitations. The charging–discharging mechanism in Al2O3/Ge/Al2O3 trilayer memory structures obtained by magnetron sputtering deposition is investigated as a function of the postdeposition annealing temperature, up to 900 °C. The change by annealing of C–V hysteresis curves from a clockwise type at low temperatures to counterclockwise one in a sample annealed within the intermediary temperature range of 550 to 650 °C, and then, a return to a clockwise type for annealing within the higher temperature range of 800–900 °C was observed. Up to 700 °C, memory performances are constantly improved reaching for 600 °C annealed samples, a memory window of 5.6 V for voltage sweep in the range −1 to +15 V, and good retention characteristics for 650 °C annealed structures, in which the charge loss is only ∼2% after 108 s. When the annealing temperature was increased above 700 °C, a rapid decrease in the memory performance takes place. The annealing-induced changes are explained based on the Ge fast diffusion and nanocrystallization process, in correlation with morphological and structural high-resolution transmission electron microscopy results.

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

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The Charge Storage Characteristics of Zro2 Nanocrystallite-Based Charge Trap Nonvolatile Memory

Impact of the Interfaces in the Charge Trap Layer on the Storage Characteristics of ZrO2/Al2O3 Nanolaminate-Based Charge Trap Flash Memory Cells

Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

Effect of Energy-Band Bending Induced by Precipitation of ZrO2nanocrystals on Memory Characteristics of Charge-Trap Flash Memory

Ti–Al–O Nanocrystal Charge Trapping Memory Cells Fabricated by Atomic Layer Deposition

A TiAl2O5 Nanocrystal Charge Trap Memory Device

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Improved Memory Characteristics by NH3Post Annealing for ZrO2Based Charge Trapping Nonvolatile Memory

Improved Memory Characteristics by NH 3 Post Annealing for ZrO 2 Based Charge Trapping Nonvolatile Memory

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Annealing Effects on the Charging–Discharging Mechanism in Trilayer Al 2 O 3 /Ge/Al 2 O 3 Memory Structures

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application