Abstract:Charge trap memory devices with Zr x Si1–x O2 films as charge trapping layer consisting of nine [(ZrO2) m (SiO2) n (ZrO2) m (SiO2) n ] units have been fabricated and investigated. The composition distribution was modulated by controlling the m and n values in each unit. It is observed that the variation of composition distribution can induce the energy band bending and additional potential barrier, which significantly improve the program/erase speed and data retention characteristics as well as extending the temperature insensitive range. When the effective potential barrier including classic potential barrier and additional potential barrier is 1.52 eV, the memory device exhibits a lower charge loss of 4.5% at 200 °C over a period of 104 s, a wider temperature insensitive range of 20 °C–111 °C, and a faster program time of 4.0 × 10−5 s achieving +6 V flat band voltage shift. The effective potential barrier values should be in the range of 1.52–1.36 eV, taking into consideration the trade-off between the retention and program/erase speed. The additional potential barrier can increase the electron tunneling distance in the directions of tunneling layer and blocking layer, giving rise to recapture process and temperature insensitive of retention characteristics. In addition, the additional potential barrier decreases the electron tunneling distance arriving trapping layer conduction band, improving the program speed. The results provide a reference to trapping layer composition distribution for future charge trap memory applications.

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

The Charge Storage Characteristics of Zro2 Nanocrystallite-Based Charge Trap Nonvolatile Memory

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS 2 Van der Waals Heterostructure

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Band-Alignment Dominated Retention Behaviors In High-K Composite Charge-Trapping Memory Devices

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

Tunable charge-trap memory based on few-layer MoS2.

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Ultrafast reconfigurable direct charge trapping devices based on few-layer MoS 2

Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory