Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

ZHANG Ting,YIN Jiang

DOI: https://doi.org/10.3969/j.issn.1003-4978.2013.03.007

2013-01-01

Abstract:Charge storage characteristics of High-k(HfO2)0.8(Al2O3)0.2 film based charge trapping memory devices,which were fabricated by atomic layer deposition,were systematically investigated.Employing the high-resolution transmission electron microscopy(HRTEM),the paper analyzes the morphology of the(HfO2)0.8(Al2O3)0.2 film,size and the device structure;the electrical characteristics of the memory device was measured by using the 4200 semiconductor parameter system.It is observed that the memory window is 3.5V at the sweeping gate voltage ±8 V;At 25 ℃,85 ℃ and 150 ℃,the extrapolation of the experimental results show that the charge loss after ten years were 17 %,32%,and 48 %,respectively.For the(HfO2)0.8(Al2O3)0.2 film-based charge trapping memory device,the memory window is degraded by 4.5% after 105 Write/Erase cycles.The results demonstrate that using the(HfO2)0.8(Al2O3)0.2 film as charge trapping layer can enhance the memory storage and it will be a potential candidate in future nonvolatile flash memory device application.