Abstract:HfO2, as a gate dielectric material for the charge trapping memory, has been studied extensively due to its merits such as high k value, good thermal stability, and conduction band offset relative to Si, etc.. In order to understand the reason why the charge trapping efficiency is improved by high k capture layer with respect to charge trapping type memory, the variation of HfO2 crystal texture induced by oxygen vacancy and the influences of it are investigated using the first principle calculation based on density functional theory. Results show that the distance of the nearest neighbor oxygen atom from oxygen vacancy is markedly reduced after optimization, whereas the decrease of distances between the next nearest neighbor oxygen atom from oxygen vacancy and hafnium is less. The change of local crystal lattice is caused by optimized oxygen vacancy for it significantly changes the local lattice, but rarely influences the far lattice. Deep energy level and density of electron states in conduction band are contributed by Hf atoms, while the density of electron states in valence band is contributed by O atoms. The local density of electron states in each element and the total density of electron states in the optimization system are all larger than those in the system without optimization, and the sum of the local densities of electron states is less than the total density of electron states. The trapped charges are moving mainly around the oxygen vacancy and the adjacent atoms of oxygen in the optimization system, but the charges are without optimization throughout the system. The local energy of charge is increased in optimized defect system, while the local energy of charge is conspicuously reduced in the system without optimization, i.e. lattice variation without saturation characteristic has a large effect on the local energy of charge. Results further prove that the change of crystal lattice induced by oxygen vacancy has strong ability to capture charge, which helps improve the features of memory.

Defect States And Charge Trapping Characteristics Of Hfo2 Films For High Performance Nonvolatile Memory Applications

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

Effect of Oxygen Vacancy on Lattice and Electronic Properties of HfO2 by Means of Density Function Theory Study

Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application

Effects of Composition on the Memory Characteristics of (Hfo2)x(al2o3)1-Xbased Charge Trap Nonvolatile Memory

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Ferroelectric and electric field cycling properties of un-doped HfO2 films

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

Resistive switching characteristics of hafnium oxide with CU doping for nonvolatile memory application

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Modulation on Interfacial States for the Improved Charge Storage Performance in HfO2 Matrix Embedded CoO Nanoparticles-Based Memory Capacitors

Challenges and Recent Advances in HfO2-based Ferroelectric Films for Non-Volatile Memory Applications

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

The Effect of Thermal Treatment Induced Inter-Diffusion at the Interfaces on the Charge Trapping Performance of Hfo2/Al2o3 Nanolaminate-Based Memory Devices

Growth of the Orthorhombic Phase and Inhibition of Charge Injection in Ferroelectric HfO2-based MFIS Memory Devices with a High-Permittivity Dielectric Seed Layer