Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application

Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

Multistacked Al2O3∕HfO2∕SiO2 Tunnel Layer for High-Density Nonvolatile Memory Application

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Ti–Al–O Nanocrystal Charge Trapping Memory Cells Fabricated by Atomic Layer Deposition

Effects of Composition on the Memory Characteristics of (Hfo2)x(al2o3)1-Xbased Charge Trap Nonvolatile Memory

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Defect States And Charge Trapping Characteristics Of Hfo2 Films For High Performance Nonvolatile Memory Applications

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer