Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

The Effect of Thermal Treatment Induced Inter-Diffusion at the Interfaces on the Charge Trapping Performance of Hfo2/Al2o3 Nanolaminate-Based Memory Devices

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Process Optimization of HfAlO Trapping Layer for High Performance Charge Trap Flash Memory Application

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Impact of the Interfaces in the Charge Trap Layer on the Storage Characteristics of ZrO2/Al2O3 Nanolaminate-Based Charge Trap Flash Memory Cells

Effects of Composition on the Memory Characteristics of (Hfo2)x(al2o3)1-Xbased Charge Trap Nonvolatile Memory

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

Impact of Band-Engineering to Performance of High- K Multilayer Based Charge Trapping Memory

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Characteristics of atomic layer deposition-derived all-high-k-based structures for flash memory application