Abstract:Caption: To realize high‐performance transistor memory can be challenging owing to the contradictory nature properties of charge trapping stability and injection efficiency. By investigating the energy mismatch of tunneling materials using different conjugation lengths or blends of polymers, the fabricated tunneling‐driven transistor memory using a 300 nm SiO2 dielectric shows a broad memory window of ≈77.6 V, high on–off ratio >104, longer charge trapping lifetime, faster operations (≈1 s) and lower driving voltage (≈20 V). Highly efficient charge injection and charge trapping stability of the tunneling layer are of desirable and practical importance to transistor memory applications. However, both of which can be contradictory to the nature properties of its material. It is herein demonstrated that lowering the energy mismatch of the tunneling layer by employing a longer conjugation length of the polymer can improve the charge injection efficiency, albeit the trapped charges will be easily diminished and finally losing its memory characteristics, and vice versa. To further elaborate and verify this concept, both materials are blended with distinct nature of properties as the tunneling layer in pentacene‐based transistor devices. As the results, the device using 300 nm SiO2 with optimum blending ratio displays a broad memory window of ≈77.6 V which is superior to the non‐blended tunneling layer carrying appropriate energy levels and band gap energy, not to mention, revealing fast operation time (≈1 s), low driving voltage (≈20 V), long retention (>104 s), and high switching stability over 50 cycles with on–off ratio of >104. Most importantly, this finding shed insight into the design of tunneling materials for advancing organic transistor memory technologies based on tunneling‐effect‐boosted interfacial charge trapping.

Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory

Effect of Energy-Band Bending Induced by Precipitation of ZrO2nanocrystals on Memory Characteristics of Charge-Trap Flash Memory

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Enhanced charge storage characteristics by ZrO2 nanocrystallites precipitated from amorphous (ZrO2)0.8(SiO 2)0.2 charge trapping layer

Band-Alignment Dominated Retention Behaviors In High-K Composite Charge-Trapping Memory Devices

A Charge-Trap Memory Device with a Composition-Modulated Zr-Silicate High- K Dielectric Multilayer Structure

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

The Dominant Factors Affecting the Memory Characteristics of (ta2o5)x(al2o3)1−x High-K Charge-Trapping Devices

Enhanced Memory Performance by Tailoring the Microstructural Evolution of (zro 2 ) 0.6 (sio 2 ) 0.4 Charge Trapping Layer in the Nanocrystallites-Based Charge Trap Flash Memory Cells

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

Impact of Band-Engineering to Performance of High- K Multilayer Based Charge Trapping Memory

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Tailoring the Tunneling‐Effect‐Boosted Interfacial Charge Trapping via Effective Conjugation Length

The Effect of the Thickness of Tunneling Layer on the Memory Properties of (cu2o)(0.5)(al2o3)(0.5) High-K Composite Charge-Trapping Memory Devices

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

The Charge Storage Characteristics of Zro2 Nanocrystallite-Based Charge Trap Nonvolatile Memory

Charge Tunneling and Trapping in Er Stabilized Β-Mno2 Films for Memory Applications

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices