Abstract:Charge trap memory devices with Zr x Si1–x O2 films as charge trapping layer consisting of nine [(ZrO2) m (SiO2) n (ZrO2) m (SiO2) n ] units have been fabricated and investigated. The composition distribution was modulated by controlling the m and n values in each unit. It is observed that the variation of composition distribution can induce the energy band bending and additional potential barrier, which significantly improve the program/erase speed and data retention characteristics as well as extending the temperature insensitive range. When the effective potential barrier including classic potential barrier and additional potential barrier is 1.52 eV, the memory device exhibits a lower charge loss of 4.5% at 200 °C over a period of 104 s, a wider temperature insensitive range of 20 °C–111 °C, and a faster program time of 4.0 × 10−5 s achieving +6 V flat band voltage shift. The effective potential barrier values should be in the range of 1.52–1.36 eV, taking into consideration the trade-off between the retention and program/erase speed. The additional potential barrier can increase the electron tunneling distance in the directions of tunneling layer and blocking layer, giving rise to recapture process and temperature insensitive of retention characteristics. In addition, the additional potential barrier decreases the electron tunneling distance arriving trapping layer conduction band, improving the program speed. The results provide a reference to trapping layer composition distribution for future charge trap memory applications.

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

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The Effect of the Thickness of Tunneling Layer on the Memory Properties of (cu2o)(0.5)(al2o3)(0.5) High-K Composite Charge-Trapping Memory Devices

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Composition Dependent Charge Retention in Amorphous HfxAl1−xOy Dielectric Layers

Progress of Charge Trapping Layers in Charge Trapping Memories

Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations

Impact of the Interfaces in the Charge Trap Layer on the Storage Characteristics of ZrO2/Al2O3 Nanolaminate-Based Charge Trap Flash Memory Cells

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Correlation between memory characteristics and energy band bending resulted from composition distribution of trapping layer for charge trap memory

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

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Charge Storage Characteristics of Atomic Layer Deposited Zro2/Al2o3 Multilayered Films

Simulation of Charge Trapping Memory with Novel Structures

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

The Charge Storage Characteristics of Zro2 Nanocrystallite-Based Charge Trap Nonvolatile Memory

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements