Abstract:As NAND flash evolved from two-dimensional (2D) to three-dimensional (3D), all cells have been changed to share a charge trap layer (CTL). This change has a lateral charge spreading effect, which is the trapped charge spreading laterally. This lateral charge spreading effect causes a major problem in NAND flash reliability. In this study, we introduce a new structure that can improve lateral charge spreading by defining a new parameter called 'intercell CTL thickness' and modifying the CTL structure in the WL spaces. When the intercell CTL thickness decreases, the ISPP slope remains relatively constant up to a certain thickness, indicating that program efficiency does not decrease until that critical point. However, as the intercell CTL thickness decreases, the current also decreases, which can be explained by the screen effect and dielectric constant reduction. As for the thickness of the CTL, which is the trap nitride thickness, it decreases while the oxide thickness increases. As a result, it causes a decrease in the total dielectric constant, resulting a decrease in cell current. In addition, as the physical CTL thickness decreases, more charges will be trapped in the same condition. More charges strengthen the screen effect on the electric field, causing a decrease in cell current. In this study, we will discuss the retention characteristics of this novel structure, investigate the window characteristics between lateral charge spreading with cell current, and propose the optimal point.

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Impact Of Self-Heating Effect On The Retention Of 3-D Nand Flash Memory

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

Investigation of Endurance Characteristics in 3-D NAND Flash Memory With Trap Profile Analysis

Simulation of Charge Trapping Memory with Novel Structures

Reduce cell to cell charge interference by virtual ground inclusion in 3-dimensional vertical gate NAND flash memory

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations

Novel Dummy Cell Programming Scheme to Improve Retention Characteristics in 3-D NAND Flash Memory

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

Optimizing Confined Nitride Trap Layers for Improved Z-Interference in 3D NAND Flash Memory

Comprehensive investigations on defects' stability caused lateral charge loss in Ti-doped 3D NAND

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories