Abstract:This paper summarizes our work on experimentally characterizing, mitigating, and recovering data retention errors in multi-level cell (MLC) NAND flash memory, which was published in HPCA 2015, and examines the work's significance and future potential. Retention errors, caused by charge leakage over time, are the dominant source of flash memory errors. Understanding, characterizing, and reducing retention errors can significantly improve NAND flash memory reliability and endurance. In this work, we first characterize, with real 2Y-nm MLC NAND flash chips, how the threshold voltage distribution of flash memory changes with different retention ages -- the length of time since a flash cell was programmed. We observe from our characterization results that 1) the optimal read reference voltage of a flash cell, using which the data can be read with the lowest raw bit error rate (RBER), systematically changes with its retention age, and 2) different regions of flash memory can have different retention ages, and hence different optimal read reference voltages. Based on our findings, we propose two new techniques. First, Retention Optimized Reading (ROR) adaptively learns and applies the optimal read reference voltage for each flash memory block online. The key idea of ROR is to periodically learn a tight upper bound of the optimal read reference voltage, and from there approach the optimal read reference voltage. Our evaluations show that ROR can extend flash memory lifetime by 64% and reduce average error correction latency by 10.1%. Second, Retention Failure Recovery (RFR) recovers data with uncorrectable errors offline by identifying and probabilistically correcting flash cells with retention errors. Our evaluation shows that RFR essentially doubles the error correction capability.

Impact Of Self-Heating Effect On The Retention Of 3-D Nand Flash Memory

Impact of Program–Erase Operation Intervals at Different Temperatures on 3D Charge-Trapping Triple-Level-Cell NAND Flash Memory Reliability

Temperature Impacts on Endurance and Read Disturbs in Charge-Trap 3D NAND Flash Memories

Electrothermal Simulation of Resistive Random Access Memory(RRAM) Array Using Finite Difference Method

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Thermal Effect on Endurance Performance of 3-Dimensional Rram Crossbar Array

Analysis of Residual Stresses Induced in the Confined 3D NAND Flash Memory Structure for Process Optimization

Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement

Electrothermal Investigation on Vertically Aligned Single-Walled Carbon Nanotube Contacted Phase-Change Memory Array for 3-D ICs

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

Architectural Techniques for Improving NAND Flash Memory Reliability

Experimental Characterization, Optimization, and Recovery of Data Retention Errors in MLC NAND Flash Memory

Thermal Crosstalk in 3-Dimensional RRAM Crossbar Array

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

Impact of low temperature on the TSG Vt shift during erase cycling of 3-D NAND Flash memory

Investigation of Retention Noise for 3-D TLC NAND Flash Memory

Balancing Page Endurance Variation Between Layers to Extend 3D NAND Flash Memory Lifetime

Self-heating Effect on Logic Performance of 6T-SRAM Based on CFET Device

An Optimized Device Structure with a Highly Stable Process Using Ferroelectric Memory in 3D NAND Flash Memory Applications

Thermal Effect in Ultra-High Density 3D Vertical and Horizontal RRAM Array