Abstract:As NAND flash evolved from two-dimensional (2D) to three-dimensional (3D), all cells have been changed to share a charge trap layer (CTL). This change has a lateral charge spreading effect, which is the trapped charge spreading laterally. This lateral charge spreading effect causes a major problem in NAND flash reliability. In this study, we introduce a new structure that can improve lateral charge spreading by defining a new parameter called 'intercell CTL thickness' and modifying the CTL structure in the WL spaces. When the intercell CTL thickness decreases, the ISPP slope remains relatively constant up to a certain thickness, indicating that program efficiency does not decrease until that critical point. However, as the intercell CTL thickness decreases, the current also decreases, which can be explained by the screen effect and dielectric constant reduction. As for the thickness of the CTL, which is the trap nitride thickness, it decreases while the oxide thickness increases. As a result, it causes a decrease in the total dielectric constant, resulting a decrease in cell current. In addition, as the physical CTL thickness decreases, more charges will be trapped in the same condition. More charges strengthen the screen effect on the electric field, causing a decrease in cell current. In this study, we will discuss the retention characteristics of this novel structure, investigate the window characteristics between lateral charge spreading with cell current, and propose the optimal point.

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Simulation of Charge Trapping Memory with Novel Structures

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Simulation on endurance characteristic of charge trapping memory

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash

Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations

Impact Of Self-Heating Effect On The Retention Of 3-D Nand Flash Memory

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

Improvement of Retention Characteristics Using Doped SiN Layer Between WL Spaces in 3D NAND Flash

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Modeling and Simulation for the Enhancement of Electron Storage in A Stacked Multilayer Nanocrystallite Silicon Floating Gate Memory

Novel Multi-Bit Non-Uniform Channel Charge Trapping Memory Device with Virtual-Source Nand Flash Array

Investigation of Endurance Characteristics in 3-D NAND Flash Memory With Trap Profile Analysis

Modeling of program Vth distribution for 3-D TLC NAND flash memory