Abstract:As NAND flash evolved from two-dimensional (2D) to three-dimensional (3D), all cells have been changed to share a charge trap layer (CTL). This change has a lateral charge spreading effect, which is the trapped charge spreading laterally. This lateral charge spreading effect causes a major problem in NAND flash reliability. In this study, we introduce a new structure that can improve lateral charge spreading by defining a new parameter called 'intercell CTL thickness' and modifying the CTL structure in the WL spaces. When the intercell CTL thickness decreases, the ISPP slope remains relatively constant up to a certain thickness, indicating that program efficiency does not decrease until that critical point. However, as the intercell CTL thickness decreases, the current also decreases, which can be explained by the screen effect and dielectric constant reduction. As for the thickness of the CTL, which is the trap nitride thickness, it decreases while the oxide thickness increases. As a result, it causes a decrease in the total dielectric constant, resulting a decrease in cell current. In addition, as the physical CTL thickness decreases, more charges will be trapped in the same condition. More charges strengthen the screen effect on the electric field, causing a decrease in cell current. In this study, we will discuss the retention characteristics of this novel structure, investigate the window characteristics between lateral charge spreading with cell current, and propose the optimal point.

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory

Simulation of Charge Trapping Memory with Novel Structures

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Comprehensive Understanding of Charge Lateral Migration in 3d Sonos Memories

Local Accumulated Free Carriers in Charge Trapping Memory

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Simulation on endurance characteristic of charge trapping memory

Comprehensive investigations on defects' stability caused lateral charge loss in Ti-doped 3D NAND

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory

A Novel Structure Between WL Spaces to Improve the Retention Characteristics in 3D NAND Flash