Abstract:In this paper, charge transportation and storage characteristics of HfO2 charge-trapping layer with various thicknesses were systematically investigated for three dimension (3D) memory device application. For the first time, charge transportation behavior is visualized by introducing in-situ electron holography technology. Under programming transient state mode, charge distribution near blocking oxide is clearly observed followed by lateral charge spreading through HfO2 grain boundary. Meanwhile, steady state behaviors are also given by Kelvin Probe Force Microscopy technique. With HfO2 trapping layer is scaled from 10nm into 3nm, although enough charge storage capability guaranteed mainly by Interface trap sites, severe degradation in data retention characteristics becomes bottleneck. Also, it is proved that the interfaces provide dominate trap sites and vertical decay plays a superior role in charge loss. Finally, nano-scale effects of HfO2 trapping layer are demonstrated from experiment which is well agreed with our characterization results. The study may provide optimization for charge trapping structures, especially for high-density 3D NAND flash applications.

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Simulation of Charge Trapping Memory with Novel Structures

An Improved Algorithm for Drift Diffusion Transport and Its Application on Large Scale Parallel Simulation of Resistive Random Access Memory Arrays

Multiphysics Simulation of Multifilamentary Conduction Resistive Random Access Memory

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Simulation on endurance characteristic of charge trapping memory

Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

Parallel Simulation of Fully Coupled Electrothermal Processes in Large-Scale Phase-Change Memory Arrays

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Carriers recombination processes in charge trapping memory cell by simulation

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations