Abstract:The HfZrO-based charge-trapping (CT) FinFET (CT-FinFET) devices with CT/de-trapping behavior occurring in the gate-stack provide a possible solution for embedded 1T DRAM application. In this brief, a novel method combining the random telegraph noise (RTN) and subthreshold swing (SS) is developed to investigate the endurance behavior of CT-FinFET devices, and the following advances have been achieved: 1) the traps in the gate-stack have been classified into two types: slow traps inside the HfZrO layer with deep energy level and fast traps at the interface with shallow energy level; 2) as the endurance cycles went on, the depth and energy level of slow traps increased, while the depth and energy level of fast traps kept the same, which indicated that the ${V}_{text {th}}$ shift is caused by the accumulation of holes' trapping in slow traps inside the HfZrO layer; 3) traps inside the HfZrO layer with deeper energy level and shallower depth can be easily occupied by holes during cycling; and 4) the generation of shallow-level traps at the interface contributes to the memory window (MW) degradation. This provides a useful tool for advancing the CT-FinFET technology.

Simulation on endurance characteristic of charge trapping memory

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level*

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Simulation of Charge Trapping Memory with Novel Structures

Experimental Extraction and Simulation of Charge Trapping during Endurance of FeFET with TiN/HfZrO/SiO2/Si (MFIS) Gate Structure

Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO 2 /Si (MFIS) Gate Structure

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

Investigation of Endurance Behavior on HfZrO-Based Charge-Trapping FinFET Devices by Random Telegraph Noise and Subthreshold Swing Techniques

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

A Novel Dual-Bbhh Erasing Scheme To Improve Endurance And Retention Performances For Localized Charge Trapping Memories

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Local Accumulated Free Carriers in Charge Trapping Memory

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

A novel internal field enhanced retention degradation model for localized charge trapping memory device

The Influence of Thermally Assisted Tunneling on the Performance of Charge Trapping Memory