Abstract:A new physics-based model to explain program transient of NAND Flash memory cells is developed in this work. Unlike preexisting model, which incorporated structural features of cylindrical cell through an arbitrary adjustment of energy band offset in a planar one, our model is uniquely devised based on cylindrical coordinates, from the beginning. Electrostatic solution from 1-D Poisson equation is used to solve the continuity equation for the free carrier concentration inside charge trap nitride (CTN), and the memory cell is modeled as a capacitor with time-varying charge to track the behavior of its threshold voltage. It is shown that newly proposed model can also predict incremental step pulse programming (ISPP) slope degradation more precisely than the prior model, due to prediction of a larger electric field at the CTN -blocking oxide (BOX) interface, which leads to larger escaping current. The model shows a good fit between the experimental data of three-gate GAA test vehicles and modeling results, displaying a better fit than the previous model.

A novel internal field enhanced retention degradation model for localized charge trapping memory device

A Novel Dual-Bbhh Erasing Scheme To Improve Endurance And Retention Performances For Localized Charge Trapping Memories

Simulation on endurance characteristic of charge trapping memory

Modeling the Coupled Charge Trapping Dynamics in FeFETs for Reliability Characterizations

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

Modeling of Retention Characteristics for Metal and Semiconductor Nanocrystal Memories

Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory

Effect of Trapped Charge Accumulation on the Retention of Charge Trapping Memory

Oxide-based RRAM: Physical based retention projection

Study Of Intercell Trapped Charge For Data Retention Improvement In 3d Nand Flash Memory

Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Analysis of charge retention characteristics for metal and semiconductor nanocrystal non-volatile memories

A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

A Physics-Based Compact Model for CBRAM Retention Behaviors Based on Atom Transport Dynamics and Percolation Theory

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

A Field-Induced Threshold Switching Model of Phase-Change Memory