Abstract:As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxide-silicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

TrappedCharge Distribution During Thep/ecycling Ofsonosmemory

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Distribution and Impact of Local Trapped Charges in SONOS Memory

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

Simulation on endurance characteristic of charge trapping memory

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

A Novel Dual-Bbhh Erasing Scheme To Improve Endurance And Retention Performances For Localized Charge Trapping Memories

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

Progress of High-K Dielectrics Applicable to Sonos-Type Nonvolatile Semiconductor Memories

Hole Storage Characteristics in Ge/Si Hetero-Nanocrystal-Based Memories

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

The Promising Multi-Bit/level Programming Operations for Nano-Scaled SONOS Memory

Effects of CHE and CHISEL Programming Operation on the Characteristics of SONOS Memory

Comparison of Local Programming Method for Multi-Bit/Level 90nm Sonos Memory

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.

Physical Mechanisms and Enhancement of Endurance Degradation of SiOx:Ag-based Volatile Memristors

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

Reliability Comparison of ISSG Oxide and HTO As Tunnel Dielectric in 3-D–SONOS Applications