Abstract:The impact of shallow trench isolation (STI) on non-volatile memories has become much more serious for sub-90-nm CMOS technologies. This paper uses the localized charge trapping polysilicon-oxide-nitride-oxide-silicon (SONOS) flash memory cells to investigate STI edge effect on programming disturb when the channel hot electron injection programming method is applied. The different programming disturbs between the central cells far from STI and the edge cells close to STI are experimentally presented on the array level. At the programmed state, the edge cells suffer larger decrease of threshold voltage compared to the central cells under the same drain disturb. However, both edge and central cells at the erased state have not any significant variations of threshold voltage distribution under the same disturb conditions. In addition, both edge and central cells demonstrate almost the same behaviors under gate disturb. Two-dimension process simulation results show that the edge cells suffer a higher compressive stress caused from STI corner than the central cells. The higher compressive stress increases hole mobility, which is mainly responsible for the relatively serious drain disturb in the programmed edge cells.

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

The Impact of Shallow Trench Isolation on the Channel Hot Electron Programming Behaviors of SONOS Cells

Reducing the Influence of Sti on Sonos Memory Through Optimizing Added Boron Implantation Technology

Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.

Analysis of Influence of STI-induced Stress on 90 Nm SONOS Memory

Optimization of Polysilicon Gate Etching Process in SONOS Memory Fabrication

Improved Programming Efficiency Through Additional Boron Implantation at the Active Area Edge in 90 Nm Localized Charge-Trapping Non-volatile Memory

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Investigation and Process Optimization of Sonos Cell'S Drain Disturb in 2-Transistor Structure Flash Arrays

Distribution and Impact of Local Trapped Charges in SONOS Memory

Impact of Sti on Statistical Variability and Reliability of Decananometer Mosfets

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Improvement of Cell’s Performance for Low Power Self-Aligned Split-Gate SONOS Memory Device

Goi Improvement in 65nm Sacrificial Oxide Free Process Integration

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Tid Radiation Response of 3-D Vertical Gaa Sonos Memory Cells

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Novel 15T SRAM Cell for Low Voltage High Reliability Application

Study on stress in trench structures during silicon IGBTs process-oxidation

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices