Abstract:Static random-access memory (SRAM) circuits exposed to pulsed X- or γ-rays will suffer transient radiation upsets, which poses a significant challenge to their reliability. The transient radiation upsets are caused by global photocurrents, which are governed by the interconnect resistance of the power supply lines and the local photocurrents generated in each memory cell. Thus, accurate modeling of local photocurrents in each memory cell is essential for predicting the global photocurrents and transient radiation upset thresholds of SRAM circuits. In this study, the local photocurrents generated in a 0.18-μm complementary metal-oxide-semiconductor (CMOS) SRAM cell are extracted using a physics-based model of the actual device structure, rather than an analytical or experimental model. The memory cell containing six transistors and parasitic structures is accurately modeled in three-dimensions. Its responses to pulsed γ-rays are simulated with an in-house parallel semiconductor device simulation program, which enables the extraction of accurate local photocurrents. These local photocurrents, together with the interconnect resistance of the power supply lines in SRAM circuits, are modeled and simulated with an in-house parallel SPICE circuit solver. Using this approach, the global photocurrents in the 0.18-μm CMOS SRAM circuit irradiated with γ-rays are obtained and the known rail-span-collapse effect is observed. Finally, the transient radiation upset threshold of the SRAM circuit is predicted numerically and verified experimentally.

Tid Radiation Response of 3-D Vertical Gaa Sonos Memory Cells

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Total Ionizing Dose Effects on Nanosheet Gate-All-Around MOSFETs Built on Void Embedded Silicon on Insulator Substrate

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

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Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

TID Characterization of 0.13&#x00b5;m SONOS Cell in 4mb NOR Flash Memory

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Study of radiation damage induced by 12 keV X-rays in MOS structures built on high resistivity n-type silicon

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

Total ionizing dose effects of novel vertical channel double-gate nMOSFETs

1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs

Single Event Upsets characterization of 65 nm CMOS 6T and 8T SRAM cells for ground level environment