Abstract:Conventional radiation-hardened cells of static random access memory (SRAM) are not robust enough in 28 nm technology, due to partial immunity of single-event upset (SEU) effect (Quatro-based cells) or insufficient critical charges in sensitive nodes (conventional stacked cells). The reduction of read noise margin (RNM) at the low supply voltage (VDD) confines these cells from low VDD applications. We propose a novel interleaving stacked-14T (ILS-14T) cell which prevents voltage transient from propagating to other redundancies. The ILS-14T cell can be resilient to both 0-1 and 1-0 upsets by injecting 12 mA in sensitive nodes. The critical charges of the ILS-14T cell are substantially larger than most other hardened cells at VDD from 0.3 to 0.9 V. The RNM of the ILS-14T cell is two times of most Quatro-based cells at 0.3 V VDD and larger than most cells at 0.6 and 0.9 V VDD. The area of occupation is 334% of the conventional 6T cell, which equals other 14T cells. The static-dynamic decoder array with 20%-40% area penalty and 116%-132% delay of rising edge, when compared with the conventional one, reduces the read failure rate by preventing single event transients (SETs) from propagating to unexpected word lines (WLs).

TID Characterization of 0.13&#x00b5;m SONOS Cell in 4mb NOR Flash Memory

Total Ionizing Radiation Effects of 2-T SONOS for 130 Nm/4 Mb NOR Flash Memory Technology

Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells

180Nm 4mb High Speed High Reliability Embedded SONOS Flash Memory

Tid Radiation Response of 3-D Vertical Gaa Sonos Memory Cells

Total Dose Radiation Experiments In Cmos/Soi 4kb Sram

A PD-SOI Based DTI-LOCOS Combined Cross Isolation Technique for Minimizing TID Radiation Induced Leakage in High Density Memory

Reverse Programmed SONOS Memory Technique for 0.18 Μm Embedded Utilization

Radiation Hardened Read Circuit with High Reliability for SOI Based SONOS Memory

Novel High-Speed Radiation Hardened Sense Amplifier for SOI Based SONOS Memory

A 280-Kbytes Twin-Bit-Cell Embedded NOR Flash Memory with a Novel Sensing Current Protection Enhanced Technique and High-Voltage Generating Systems

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

Array and High Voltage Path Design for SONOS Flash Memory

Radiation-Hardened 0.3–0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-Nm Technology for Space Applications

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

An 8-Level 3-Bit Cell Programming Technique in Nor-Type Nano-Scaled Sonos Memory Devices

A Novel Soft Error Immunity SRAM Cell

A novel flash memory cell and design optimization for high density and low power application

Distribution and Impact of Local Trapped Charges in SONOS Memory

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

TID Characterization of 0.13&amp;#x00b5;m SONOS Cell in 4mb NOR Flash Memory