Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

Distribution and Impact of Local Trapped Charges in SONOS Memory

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Effects of CHE and CHISEL Programming Operation on the Characteristics of SONOS Memory

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

Investigation of Impact of Shallow Trench Isolation on SONOS Type Memory Cells

TrappedCharge Distribution During Thep/ecycling Ofsonosmemory

Simulation of Charge Trapping Memory with Novel Structures

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Investigation and Process Optimization of Sonos Cell'S Drain Disturb in 2-Transistor Structure Flash Arrays

Discussion on the CHE Programming Characteristics with the Scaling Down of Charge Trapping Flash Memory

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

The Promising Multi-Bit/level Programming Operations for Nano-Scaled SONOS Memory

Comprehensive Understanding of Charge Lateral Migration in 3d Sonos Memories

The Impact of Shallow Trench Isolation on the Channel Hot Electron Programming Behaviors of SONOS Cells

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Simulation on endurance characteristic of charge trapping memory

Comparison of Local Programming Method for Multi-Bit/Level 90nm Sonos Memory