Abstract:Charge transport characteristics in organic semiconductor devices become altered in the presence of traps due to defects or impurities in the semiconductors. These traps can lead to a decrease in charge carrier mobility and an increase in recombination rates, thereby ultimately affecting the overall performance of the device. It is therefore important to understand and mitigate the impact of traps on organic semiconductor devices. In this contribution, the influence of the capture and release times of trap states, recombination rates, and the Lorentz force on the net charge of a low-mobility organic semiconductor was determined using the finite element method (FEM) and Hall effect method through numerical simulations. The findings suggest that increasing magnetic fields had a lesser impact on net charge at constant capture and release times of trap states. On the other hand, by increasing the capture time of trap states at a constant magnetic field and fixed release time, the net charge extracted from the semiconductor device increased with increasing capture time. Moreover, the net charge extracted from the semiconductor device was nearly four and eight times greater in the case of the non-Langevin recombination rates of 0.01 and 0.001, respectively, when compared to the Langevin rate. These results imply that the non-Langevin recombination rate can significantly enhance the performance of semiconductor devices, particularly in applications that require efficient charge extraction. These findings pave the way for the development of more efficient and cost-effective electronic devices with improved charge transport properties and higher power conversion efficiencies, thus further opening up new avenues for research and innovation in this area of modern semiconductor technology.

Comprehensive Understanding of Charge Lateral Migration in 3d Sonos Memories

Assessment Methodology of the Lateral Migration Component in Data Retention of 3D SONOS Memories

Investigation of charge loss mechanisms IN 3D TANOS cylindrical junction-less charge trapping memory

Distribution and Impact of Local Trapped Charges in SONOS Memory

Investigation of retention behavior for 3D charge trapping NAND flash memory by 2D self-consistent simulation

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

Two-dimensional Self-Consistent Simulation on Program/retention Operation of Charge Trapping Memory

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

TrappedCharge Distribution During Thep/ecycling Ofsonosmemory

Charge Migration in Organic Materials: Can Propagating Charges Affect the Key Physical Quantities Controlling Their Motion?

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Decomposition of Charge Loss Mechanisms in 3-D Nand Flash Memory: Impact of Cell Dimension via High-Temperature Long-Term Retention Characteristics

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

Experimental Evidence Toward Understanding Charge Pumping Signals in 3-D Devices with Poly-Si Channel

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Investigating the Effect of Doping Amorphous Silicon Nitride on Retention Characteristics of Sonos Device by Dft Calculation

Influence of Traps and Lorentz Force on Charge Transport in Organic Semiconductors

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Modeling of Lateral Charge Transfer in Si Nanocrystals in SiO2 Thin Film

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory