Abstract:Devices based on charge trapping are a promising solution for Flash memory scaling. The nonconductivity of their storage medium makes them more robust with respect to data loss by charge leakage through the bottom oxide, which, on the contrary sets a hard limit to floating-gate Flash scalability. Their simple processing, highly compatible with CMOS, makes them rapidly integrable into short-term solutions. The well-known SONOS concept however, still suffers from insufficient data throughput and retention. On the other hand, the recently proposed NROM concept, storing two bits in a cell, offers very interesting characteristics by using hot carrier based program/erase operations. However, important drawbacks remain, like insufficient isolation of the bits for scalability, high-power programming, and degradation of the retention after cycling. In this paper, we present a dual-bit trapping device which solves most of these problems by using a split-gate structure which was inspired by the HIMOS concept. The device has a fully self-aligned structure which allows for both bits to be physically isolated in the cell. Those features make it very scalable. Programming can be performed by the very efficient source-side injection mechanism, while erase is done by injection of band-to-band tunneling induced hot holes, which compensate for the trapped electrons. This leads to performances comparable to NROM but with lower power consumption, and lower operating voltages.

An Improved Charge Pumping Method to Study Distribution of Trapped Charges in SONOS Memory

Distribution and Impact of Local Trapped Charges in SONOS Memory

Trapped Charge Distribution during the P/E Cycling of SONOS Memory

A Novel Modified Charge Pumping Method for Trapped Charge Characterization in Nanometer-Scale Devices

TrappedCharge Distribution During Thep/ecycling Ofsonosmemory

An Improved Multilevel Cell Programming Technique for 4-Bits/cell Localized Trapping SONOS Memory Devices

Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming

Trapped Electron and Hole Distribution Mismatch Induced Reliability Degradation of SONOS Type Memory Devices

Comparison of Local Programming Method for Multi-Bit/Level 90nm Sonos Memory

Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.

Simulation of flash memory including charge trapping and de-trapping by Monte Carlo method

Charge Pumping Measurement for Determing Band-to-Band-Tunneling Induced Interface Damage During Erasing Operation of FLASH

A Two-Dimensional Simulation Method for Investigating Charge Transport Behavior in 3-D Charge Trapping Memory

Simulation on endurance characteristic of charge trapping memory

A modified charge-pumping method for the cxharacterization of interface-trap generation in MOSFETs

A New Scalable Self-Aligned Dual-Bit Split-Gate Charge-Trapping Memory Device

Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

Analyzing Trap Generation in Silicon-Nanocrystal Memory Devices Using Capacitance and Current Measurement

Analysis of Trap Generation During Programming/erasing Cycling in Silicon Nanocrystal Memory Devices

The Promising Multi-Bit/level Programming Operations for Nano-Scaled SONOS Memory

A Novel Positive Charge Pump Circuit with High Driving Capability ,high Precision and Low Power for NOR Flash Memory