Abstract:Charge storage characteristics have been investigated in metal-oxide-semiconductor memory structures based on silicon nanocrystals, where various interface traps and defects were introduced by thermal annealing treatment. The observations demonstrate that traps have strong influence on the charge storage behavior, in which the traps and defects at the internal/surface of silicon nanocrystals and the interface states at the SiO2/Si substrate play different roles, respectively. It is suggested that the injected charges are mainly stored at the deep traps of nanocrystals instead of the conduction band in long-term retention mode. The long-term charge-loss process is dominantly determined by the direct tunneling of the trapped charges to the interface states in the present experiment. An optimum way to improve the retention time would be to introduce a certain number of deep trapping centers in nanocrystals and to decrease the interface states at SiO2/Si substrate. (C) 1998 American Institute of Physics. [S0021-8979(98)09216-0].

Analyzing Trap Generation in Silicon-Nanocrystal Memory Devices Using Capacitance and Current Measurement

Analysis of Trap Generation During Programming/erasing Cycling in Silicon Nanocrystal Memory Devices

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

C-V and G-V Measurements Showing Single Electron Trapping in Nanocrystalline Silicon Dot Embedded in MOS Memory Structure

Simulation of Charge Trapping Memory with Silicon Nanocrystals Embedded in Silicon Nitride Layer

Electron Trapping, Storing, and Emission in Nanocrystalline Si Dots by Capacitance–voltage and Conductance–voltage Measurements

Storage Characteristics of Nano-Crystal Si Devices Using Different Measurements for MOS Capacitors

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Silicon Nano-Crystals Based Mos Memory and Effects of Traps on Charge Storage Characteristics

Effects of interface traps in silicon-quantum-dots-based memory structures

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

Simulation of Charge Trapping Memory with Novel Structures

Fabrication and Charging Characteristics of Mos Capacitor Structure with Metal Nanocrystals Embedded in Gate Oxide

RESONANT TUNNELING AND COULOMB BLOCKADE IN A NANOCRYSTALLINE Si DOUBLE-BARRIER FLOATING-GATE STRUCTURE

Investigation of Gate Oxide Traps Effect on NAND Flash Memory by TCAD Simulation*

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Temperature and Frequency Dependencies of Charging and Discharging Properties in Mos Memory Based on Nanocrystalline Silicon Dot

Charge Trapping Memory Devices Employing Multi-Layered Ge/Si Nanocrystals for Storage Fabricated with ALD and PLD Methods

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

Analysis of electrostatic crosstalk in 3D vertical NAND Charge Trapping Memory with junctionless GAA nanowire FET