Abstract:The interface properties and electrical characteristics of the n-type 4H–SiC planar and trench metal–oxide–semiconductor (MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250°C in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the (112¯0) and (11¯00) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the (0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces.

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Electrical characterization of SiC MOS capacitors: A critical review

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Comparative Study on Slow-State Near Interface Hole Traps in NO and Ar Annealed N-type 4H-Sic MOS Capacitors by Ultraviolet Light

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-Sic MOS Capacitors and MOSFETs

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Capacitance-voltage characteristics of a metal-carbon-silicon structure