Abstract:Publication date: 31 May 2023 Source: Materials Science Forum Vol. 1090 Author(s): Aleksandr Vasilev, Maximilian Wolfgang Feil, Christian Schleich, Bernhard Stampfer, Gerhard Rzepa, Gregor Pobegen, Tibor Grasser, Michael Waltl We investigated oxide and interface defects of lateral 4H-SiC MOSFETs through capacitance-voltage (C-V) and conductance-voltage (G-V) characterization at various frequencies and temperatures. By employing consecutive up and down sweeps of the gate voltage at three different temperatures, we experimentally characterized the hysteresis width as the difference between up and down sweeps in the depletion to accumulation (d-a) and depletion to inversion (d-i) regions. We observed an increase in the hysteresis width with decreasing temperature. Although the hysteresis width is not affected by the small-signal frequency, at the same time, increasing the frequency leads to a strong stretch-out effect, especially in the d-i region.Our measurement results indicate that the hysteresis deformation of the C-V curves is dominated by three different trap types. First, interface acceptor-like defects located close to the conduction band can follow the small-signal frequency. Slower acceptor-like border traps with trap levels both close to the conduction band and in the middle of the band gap are however responsible for the increase of trapped negative charge with increasing gate voltage. Finally, we assume the presence of a fixed positive charge.

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-Sic MOS Capacitors and MOSFETs

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Electrical characterization of SiC MOS capacitors: A critical review

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO$_2$/4H-SiC MOSFETs

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

A Study on the Surface Trap Effect on 4H-Sic MESFET's

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

Interface and Border Traps in the Gate Stack of Carbon Nanotube Film Transistors with an Yttria Dielectric

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Simulation of Surface State Effects in the Transient Response of 4H-Sic Mesfets